? 2007 ixys corporation, all rights reserved genx3 tm 300v igbt IXGH60N30C3 high speed igbts for 50-150khz switching v ces = 300v i c110 = 60a v ce(sat) 1.8v t fi typ = 70ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 300 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 30 a v ge = 0v t j = 125 c 750 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 60a, v ge = 15v 1.55 1.8 v t j = 125 c 1.60 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v cgr t j = 25 c to 150 c, r ge = 1m ? 300 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c (chip capability) 60 a i cm t c = 25 c, 1ms 420 a i a t c = 25 c 60 a e as t c = 25 c 400 mj ssoa v ge = 15v, t vj = 125 c, r g = 5 ? i cm = 170 a (rbsoa) clamped inductive load @ 300v p c t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight 6g ds99914a (01/08) g = gate c = collector e = emitter tab = collector features z high frequency igbt z square rbsoa z high avalanche capability z drive simplicity with mos gate turn-on z high current handling capability applications z pfc circuits z pdp systems z switched-mode and resonant-mode converters and inverters z smps z ac motor speed control z dc servo and robot drives z dc choppers advance technical information to-247 ad (ixgh) (tab) g c e
ixys reserves the right to change limits, test conditions, and dimensions. IXGH60N30C3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 0.5 ? i c110 , v ce = 10v 28 46 s pulse test, t 300 s; duty cycle, d 2%. c ies 3800 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 240 pf c res 63 pf q g 101 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 21 nc q gc 37 nc t d(on) 23 ns t ri 28 ns e on 0.15 mj t d(off) 108 160 ns t fi 68 ns e off 0.30 0.55 mj t d(on) 22 ns t ri 28 ns e on 0.26 mj t d(off) 120 ns t fi 101 ns e off 0.40 mj r thjc 0.42 c/w r thck 0.21 c/w inductive load, t j = 125 c i c = 0.5 ? i c110 , v ge = 15v v ce = 200v, r g = 5 ? ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 inductive load, t j = 25 c i c = 0.5 ? i c110 , v ge = 15v v ce = 200v, r g = 5 ? advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p
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